- 您现在的位置：买卖IC网 > Sheet目录507 > SH8K22TB1 (Rohm Semiconductor)MOSFET N-CH DUAL 45V 4.5A SOP8
SH8K22
? Electrical characteristic curves
Data Sheet
Ta=125 C
75 C
10
V DS =10V
pulsed
1000
o
o
V GS =10V
pulsed
1000
V GS =4.5V
pulsed
25 C
o
Ta=125 C
-25 C
1
o
100
o
100
75 C
25 C
o
o
-25 C
0.1
o
10
10
Ta=125 o C
75 o C
25 o C
-25 o C
0.01
1
1
1.0
1.5 2.0 2.5 3.0
Gate-Source Voltage : V GS [V]
3.5
0.01
0.1 1
Drain Current : I D [A]
10
0.01
0.1 1
Drain Current : I D [A]
10
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (1)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (2)
1000
V GS =4V
200
Ta=25 o C
10
V GS =0V
100
pulsed
150
100
pulsed
1
pulsed
Ta=125 o C
75 o C
25 o C
Ta=125 C
10
o
75 o C
I D =4.5A
7
0.1
-25 o C
25 C
o
50
-25 o C
I D =2.25A
1
0
0.01
0.01
0.1
1
10
0
5
10
15
0
0.5
1
1.5
Drain Current : I D [A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (3)
Gate-Source Voltage : V GS [V]
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Source-Drain Voltage : V SD [V]
Fig.6 Source-Current vs.
Source-Drain Voltage
10000
Ta=25 o C
10000
Ta=25 o C
10
Ta=25 o C
1000
f=1MHz
V GS =0V
C iss
1000
t f
V DD =25V
V GS =10V
R G =10 ?
Pulsed
8
6
V DD =25V
I D =4.5A
R G =10 ?
Pulsed
100
100
C oss
t d(off)
t d(on)
4
C rss
10
t r
2
10
1
0
0.01
0.1
1
10
100
0.01
0.1
1
10
0
2
4
6
8
10
12
Drain-Source Voltage : V DS [V]
Fig.7 Typical capacitance vs.
Source-Drain Voltage
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
Drain Current : I D [A]
Fig.8 Switching Characteristics
3/4
Total Gate Charge : Qg [nC]
Fig.9 Dynamic Input Characteristics
2009.12 - Rev.A
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SH8K32TB1
MOSFET N-CH DUAL 60V 4.5A SOP8
SH8M41TB1
MOSFET N/P-CH 80V SOP8
SH8M70TB1
MOSFET N/P-CH 250V SOP8
SI-300CC
CONTROLLER FOR VC-04 CAMERA
SI1010DK
DEVELOPMENT KIT SI101X
SI1021R-T1-GE3
MOSFET P-CH 60V 190MA SC-75A
SI1022R-T1-GE3
MOSFET N-CH 60V 330MA SC-75A
SI1024X-T1-GE3
MOSFET DL N-CH 20V 485MA SC89-6
相关代理商/技术参数
SH8K2TB1
功能描述:MOSFET Nch+Nch 30V 6A MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SH8K3
制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch+Nch MOSFET
SH8K32
制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch+Nch MOSFET
SH8K32TB
制造商:ROHM Semiconductor 功能描述:
SH8K32TB1
功能描述:MOSFET Nch+Nch 60V 4.5A MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SH8K3TB1
功能描述:MOSFET Nch+Nch 30V 7A MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SH8K4
制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive NchNch MOSFET
SH8K4_09
制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive NchNch MOSFET